 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| www.irf.com 1 05/14/08 irfr3707zpbfirfu3707zpbf hexfet power mosfet notes through are on page 11 applications benefits very low r ds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current high frequency synchronous buck converters for computer processor power high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use lead-free i-pak irfu3707zpbf d-pak irfr3707zpbf v dss r ds(on) max qg 30v 9.5m 9.6nc absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation w p d @t c = 100c maximum power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case CCC 3.0 c/w r ja junction-to-ambient (pcb mount) CCC 50 r ja junction-to-ambient CCC 110 300 (1.6mm from case) -55 to + 175 50 0.33 25 max. 56 39 220 20 30 downloaded from: http:///
2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units bv dss drain-to-source breakdown voltage 30 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 0.023 CCC v/c r ds(on) static drain-to-source on-resistance CCC 7.5 9.5 m ? CCC 10 12.5 v gs(th) gate threshold voltage 1.35 1.80 2.25 v ? v gs(th) / ? t j gate threshold voltage coefficient CCC -5.0 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 a CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 71 CCC CCC s q g total gate charge CCC 9.6 14 q gs1 pre-vth gate-to-source charge CCC 2.6 CCC q gs2 post-vth gate-to-source charge CCC 0.90 CCC nc q gd gate-to-drain charge CCC 3.5 CCC q godr gate charge overdrive CCC 2.6 CCC see fig. 16 q sw switch char g e (q gs2 + q gd ) CCC 4.4 CCC q oss output charge CCC 5.8 CCC nc t d(on) turn-on delay time CCC 8.0 CCC t r rise time CCC 11 CCC t d(off) turn-off delay time CCC 12 CCC ns t f fall time CCC 3.3 CCC c iss input capacitance CCC 1150 CCC c oss output capacitance CCC 260 CCC pf c rss reverse transfer capacitance CCC 120 CCC avalanche characteristics parameter units e as si n gl e p u l se a va l anc h e e ner gy mj i ar a va l anc h e c urrent a e ar r epet i t i ve a va l anc h e e ner gy mj diode characteristics parameter min. t y p. max. units i s continuous source current CCC CCC 56 (body diode) a i sm pulsed source current CCC CCC 220 (body diode) v sd diode forward voltage CCC CCC 1.0 v t rr reverse recovery time C C C2 53 8n s q rr reverse recovery charge CCC 17 26 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 20v v gs = -20v conditions 5.0 max. 4212 ? = 1.0mhz conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 15a v ds = v gs , i d = 25a v ds = 24v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c clamped inductive load v ds = 15v, i d = 12a v ds = 15v, v gs = 0v v dd = 16v, v gs = 4.5v i d = 12a v ds = 15v t j = 25c, i f = 12a, v dd = 15v di/dt = 100a/s t j = 25c, i s = 12a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol v gs = 4.5v, i d = 12a CCC v gs = 4.5v typ. CCC CCC i d = 12a v gs = 0v v ds = 15v downloaded from: http:/// www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.2v 20s pulse width tj = 25c vgs top 10v 6.0v 4.5v 4.0v 3.3v 2.8v 2.5v bottom 2.2v 0.1 1 10 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.2v 20s pulse width tj = 175c vgs top 10v 6.0v 4.5v 4.0v 3.3v 2.8v 2.5v bottom 2.2v 0 2 4 6 8 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 10v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 30a v gs = 10v downloaded from: http:/// 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 024681 01 2 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 12a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v sd , source-to-drain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec tc = 25c tj = 175c single pulse downloaded from: http:/// www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.823 0.0001281.698 0.000845 0.481 0.016503 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri downloaded from: http:/// 6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13. gate charge test circuit fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 14a. switching time test circuit fig 14b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.7a 5.6a bottom 12a downloaded from: http:/// www.irf.com 7 fig 15. for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? !"!! ? # $$ ? !"!!% " fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr downloaded from: http:/// 8 www.irf.com control fet !" # $ %& !" # #' p loss = p conduction + p switching + p drive + p output this can be expanded and approximated by; p loss = i rms 2 r ds(on ) () + i q gd i g v in f ? ? ? ? ? ? + i q gs 2 i g v in f ? ? ? ? ? ? + q g v g f () + q oss 2 v in f ? ? ? ? " ( %& !" %& !" " ) # * % + %& !" # # , # - . / # # synchronous fet the power loss equation for q2 is approximated by; p loss = p conduction + p drive + p output * p loss = i rms 2 r ds(on) () + q g v g f () + q oss 2 v in f ? ? ? ? ? + q rr v in f ( ) *dissipated primarily in q1. for the synchronous mosfet q2, r ds(on) is an im- portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. under light load the mosfet must still be turned on and off by the con- trol ic so the gate drive losses become much more significant. secondly, the output charge q oss and re- verse recovery charge q rr both generate losses that are transfered to q1 and increase the dissipation in that device. thirdly, gate charge will impact the mosfets susceptibility to cdv/dt turn on. the drain of q2 is connected to the switching node of the converter and therefore sees transitions be-tween ground and v in . as q1 turns on and off there is a rate of change of drain voltage dv/dt which is ca-pacitively coupled to the gate of q2 and can induce a voltage spike on the gate that is sufficient to turn the mosfet on, resulting in shoot-through current . the ratio of q gd /q gs1 must be minimized to reduce the potential for cdv/dt turn on. power mosfet selection for non-isolated dc/dc converters figure a: q oss characteristic downloaded from: http:/// www.irf.com 9 ! ! " # $ %&' ()*++',-./.()'0%+(&(%) ()1(2*&'+ '*1"3'' ! note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:/// 10 www.irf.com -0 - . ! " #$%&&'()*+*#$' ,-&#.#-$#$/#0%.'& '%/12'' note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:/// www.irf.com 11 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/2008 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.58mh, r g = 25 ? , i as = 12a. pulse width 400s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. 0 - . tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:/// |
Price & Availability of IRFR3707ZTRRPBF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |